'Oxidation III - Dopant Redistribution' Video Lecture

Oxidation III - Dopant Redistribution

  • Course: VLSI Technology
  • Discipline: Electronics and Communication Engineering
  • Faculty: Dr. Nandita Dasgupta
  • Institute: IIT Madras

    • Oxidation III - Dopant Redistribution - Click on the Video Link shown below to play the video on Youtube. Browse through VLSI Technology (Electronics and Communication Engineering) Video Lectures by Dr. Nandita Dasgupta from IIT Madras through NPTEL.

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    Course Video Lectures Introduction on VLSI Design Bipolar Junction Transistor Fabrication MOSFET Fabrication for IC Crystal Structure of Si Crystal Structure contd Defects in Crystal + Crystal growth Crystal growth Contd + Epitaxy I Epitaxy II - Vapour phase Epitaxy Epitaxy III - Doping during Epitaxy Molecular beam Epitaxy Oxidation I - Kinetics of Oxidation Oxidation II Oxidation rate constants Oxidation III - Dopant Redistribution Oxidation IV - Oxide Charges Diffusion I - Theory of Diffusion Diffusion II - Infinite Source Diffusion III - Actual Doping Profiles Diffusion IV Diffusion Systems Ion - Implantation Process Ion - Implantation Process Annealing of Damages Masking during Implantation Lithography - I Lithography - II Wet Chemical Etching Dry Etching Plasma Etching Systems Etching of Si,Sio2,SiN and other materials Plasma Deposition Process Metallization - I Problems in Aluminium Metal contacts IC BJT - From junction isolation to LOCOS Problems in LOCOS + Trench isolation More about BJT Fabrication and Realization Circuits + Transistors in ECL Circuits MOSFET I - Metal gate vs. Self-aligned Poly-g.. MOSFET II Tailoring of Device Parameters CMOS Technology Latch - up in CMOS BICMOS Technology
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