Toggle navigation
Institute
IISc Bangalore
IIT Bombay
IIT Delhi
IIT Guwahati
IIT Kanpur
IIT Kharagpur
IIT Madras
IIT Roorkee
Discipline
Aerospace Engineering
Atmospheric Science
Basic courses
Biotechnology
Chemical Engineering
Chemistry and Biochemistry
Civil Engineering
Computer Science and Engineering
Electrical Engineering
Electronics & Communication Engineering
Engineering Design
General
Humanities and Social Sciences
Management
Mathematics
Mechanical Engineering
Home
Electronics & Comm. Eng.
High Speed Devices and Circuit..
Lecture# 21
'MESFET I V characteristics Shockley's Model' Video Lecture
MESFET I V characteristics Shockley's Model
Course
:
High Speed Devices and Circuits
Discipline
:
Electronics and Communication Engineering
Faculty
: Prof. K.N. Bhat
Institute
:
IIT Madras
MESFET I V characteristics Shockley's Model
- Browse through
High Speed Devices and Circuits (Electronics and Communication Engineering)
Video Lectures by
Prof. K.N. Bhat
from
IIT Madras
through NPTEL.
Course
:
High Speed Devices and Circuits
Discipline
:
Electronics and Communication Engineering
Faculty
: Prof. K.N. Bhat
Institute
:
IIT Madras
NEXT LECTURE >>
MESFET Shockley's Model and velocity saturation effect
Download this video in MP4, FLV & 3GP formats
Format
Size
Download
MP4
245 MB
MP4 Video Download Link 1
FLV
176 MB
FLV Video Download Link 1
3gp
60 MB
3gp Video Download Link 1
Search Courses by Discipline & Institute
Search Courses
Discipline
All Disciplines
Aerospace Engineering
Atmospheric Science
Basic courses
Biotechnology
Chemical Engineering
Chemistry and Biochemistry
Civil Engineering
Computer Science and Engineering
Electrical Engineering
Electronics and Communication Engineering
Engineering Design
General
Humanities and Social Sciences
Management
Mathematics
Mechanical Engineering
Institute
All Institutes
IISc Bangalore
IIT Bombay
IIT Delhi
IIT Guwahati
IIT Kanpur
IIT Kharagpur
IIT Madras
IIT Roorkee
SASTRA University
Search
Course Video Lectures
Introduction to Basic concepts
Requirements for high speed circuits, devices..
Classification and properties of semiconducto..
Ternary compound semiconductors and their app..
Ternary compound semiconductors and their app..
Crystal structures in GaAs
Dopants and impurities in GaAs and InP
Brief Overview of GaAs Technology for High Sp..
Epitaxial Techniques for GaAs and high speed ..
MBE and LPE for GaAs Epitoxy
GaAs and InP devices for Microelectronics
Metal Semiconductor contacts for MESFET
Metal Semiconductor contacts for MESFET(contd..
Metal Semiconductor contacts for MESFET(Contd..
Ohmic contacts on semiconductors
Fermi level pinning, I V characteristics of S..
Schottky Barrier Diodes I V characteristics o..
Schottky Barrier Diodes I V characteristics o..
Causes of Non idealities in the Schottky Barr..
MESFET operations and I V characteristics
MESFET I V characteristics Shockley's Model
MESFET Shockley's Model and velocity saturati..
MESFET velocity saturation effect on drain cu..
MESFET : Drain current saturation Ids due to ..
MESFET : Effects of channel length and gate l..
MESFET : Effects of velocity saturation and v..
MESFET : Effects of velocity field characteri..
MESFET : Velocity overshoot effect and self a..
Self Aligned MESFET SAINT Threshold Voltage a..
Hetero junctions
Hetero junctions and high electron Mobility T..
Hetero junctions and high electron Mobility T..
High Electron Mobility Transistor
HEMT off voltage, I-V characteristics and tra..
I-V characteristics and trans conductance and..
Indium phosphide based HEMT
Pseudomorphic HEMT and Hetrojunction Bipolar ..
Hetero junction Bipolar Transistors (HBT)
Hetero junction Bipolar Transistors (HBT) (Co..
Hetero junction Bipolar Transistors (HBT) (Co..
Hetero junction Bipolar Transistors(HBT)-4(Co..
2015. EngineeringVideoLectures.com